Optical and electrical characterization of InGaBiAs for use as a new mid-infrared optoelectronic material
| dc.contributor.author | Petropoulos, J. P. | |
| dc.contributor.author | Zhong, Y. | |
| dc.contributor.author | Zide, J. M. O. | |
| dc.contributor.orderedauthor | Petropoulos, J. P., Zhong, Y., Zide, J. M. O. | |
| dc.contributor.udauthor | Petropoulos, J. P. | |
| dc.contributor.udauthor | Zhong, Y. | |
| dc.contributor.udauthor | Zide, J. M. O. (orcid.org/0000-0002-6378-7221) | |
| dc.date.accessioned | 2014-08-26T01:55:56Z | |
| dc.date.available | 2014-08-26T01:55:56Z | |
| dc.date.copyright | Copyright © 2011 American Institute of Physics | |
| dc.date.issued | 2011 | |
| dc.description | Final published version | en_US |
| dc.description.abstract | In0.53Ga0.47BixAs1 x films were grown on InP:Fe substrates by molecular beam epitaxy, with Bi concentrations up to x¼3.60%. Bi content in the epilayers was determined by Rutherford backscattering spectroscopy, and channeling measurements show Bi incorporating substitutionally. Unlike previous work, electrical and optical data are obtained for all samples. A redshift in peak wavelength of about 56 meV/%Bi was observed using spectrophotometry. The valence band anti-crossing model is applied, showing InyGa1 yBixAs1 x lattice-matched to InP is possible by varying the composition, with a theoretical cutoff wavelength of about 6 lm. | en_US |
| dc.description.department | University of Delaware. Department of Electrical and Computer Engineering. | |
| dc.description.department | University of Delaware. Department of Materials Science and Engineering. | |
| dc.identifier.citation | Petropoulos, J. P., Zhong, Y., & Zide, J. M. O. (2011). Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material. Applied Physics Letters, 99(3) doi:10.1063/1.3614476 | |
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3614476 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://udspace.udel.edu/handle/19716/13124 | |
| dc.language | English (United States) | |
| dc.publisher | American Institute of Physics | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | |
| dc.source | Applied Physics Letters | |
| dc.source.uri | http://scitation.aip.org/content/aip/journal/apl/browse | |
| dc.title | Optical and electrical characterization of InGaBiAs for use as a new mid-infrared optoelectronic material | en_US |
| dc.type | Article | en_US |