Optical and electrical characterization of InGaBiAs for use as a new mid-infrared optoelectronic material
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American Institute of Physics
Abstract
In0.53Ga0.47BixAs1 x films were grown on InP:Fe substrates by molecular beam epitaxy, with Bi
concentrations up to x¼3.60%. Bi content in the epilayers was determined by Rutherford
backscattering spectroscopy, and channeling measurements show Bi incorporating substitutionally.
Unlike previous work, electrical and optical data are obtained for all samples. A redshift in peak
wavelength of about 56 meV/%Bi was observed using spectrophotometry. The valence band
anti-crossing model is applied, showing InyGa1 yBixAs1 x lattice-matched to InP is possible by
varying the composition, with a theoretical cutoff wavelength of about 6 lm.
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Petropoulos, J. P., Zhong, Y., & Zide, J. M. O. (2011). Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material. Applied Physics Letters, 99(3) doi:10.1063/1.3614476