A Physically-Based Model of Vertical TFET--Part II: Drain Current Model
Date
2022-02-08
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE Transactions on Electron Devices
Abstract
A physically based model for the tunneling current of vertical tunneling field transistors (TFET) is proposed. In part I, the expression of φ1D(x,) is derived from the multi-branch general solutions of Poisson's equation. The model's results are verified with TCAD simulation for transistors with different materials, device geometries, and biases. In this article, a surface potential model is validated at different device regions which include channel and drain. Based on the above two electric potential models, Kane's tunneling formula is utilized for the calculation of band-to-band tunneling current. The proposed current model is valid for all transistors' operating regions. The quantum effect on the band-structure parameters is taken into account in the modeling of InAs vertical TFET. It is shown that the channel thickness needs to be optimized to achieve the highest drive current.
Description
Copyright 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This article was originally published in IEEE Transactions on Electron Devices. The version of record is available at: https://doi.org/10.1109/TED.2022.3146091.
Keywords
Band-to-band tunneling, compact model, line tunneling, tunneling FET
Citation
Q. Cheng, S. Khandelwal and Y. Zeng, "A Physically-Based Model of Vertical TFET--Part II: Drain Current Model," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2022.3146091.