Light and microwave driven spin pumping across FeGaB–BiSb interface

Author(s)Sharma, Vinay
Author(s)Wu, Weipeng
Author(s)Bajracharya, Prabesh
Author(s)To, Duy Quang
Author(s)Johnson, Anthony
Author(s)Janotti, Anderson
Author(s)Bryant, Garnett W.
Author(s)Gundlach, Lars
Author(s)Jungfleisch, M. Benjamin
Author(s)Budhani, Ramesh C.
Date Accessioned2022-03-02T15:57:50Z
Date Available2022-03-02T15:57:50Z
Publication Date2021-12-16
DescriptionThis article was originally published in Physical Review Materials. The version of record is available at: https://doi.org/10.1103/PhysRevMaterials.5.124410en_US
AbstractThree-dimensional (3D) topological insulators (TIs) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bilayers of amorphous ferromagnet (FM) Fe78Ga13B9 (FeGaB) and 3D TI Bi85Sb15 (BiSb) activated by two complementary techniques: spin pumping and ultrafast spin-current injection. DC magnetization measurements establish the soft magnetic character of FeGaB films, which remains unaltered in the heterostructures of FeGaB-BiSb. Broadband ferromagnetic resonance (FMR) studies reveal enhanced damping of precessing magnetization and large value of spin mixing conductance (5.03×1019m–2) as the spin angular momentum leaks into the TI layer. Magnetic field controlled bipolar DC voltage generated across the TI layer by inverse spin Hall effect is analyzed to extract the values of spin Hall angle and spin diffusion length of BiSb. The spin pumping parameters derived from the measurements of the femtosecond light-pulse-induced terahertz emission are consistent with the result of FMR. The Kubo-Bastin formula and tight-binding model calculations shed light on the thickness-dependent spin-Hall conductivity of the TI films, with predictions that are in remarkable agreement with the experimental data. Our results suggest that room temperature deposited amorphous and polycrystalline heterostructures provide a promising platform for creating novel spin orbit torque devices.en_US
SponsorThe research at Morgan State was supported by the Air Force Office of Scientific Research through Grant No. FA9550-19-1-0082. Research at Delaware, including ultrafast spectroscopy and theoretical calculations, was primarily supported by NSF through the University of Delaware Materials Research Science and Engineering Center, DMR-2011824. M.B.J. acknowledges additional support from the NSF through Grant No. 1833000. Product names are mentioned to provide an accurate record of what was done. Reference of product names does not constitute validation or endorsement.en_US
CitationSharma, Vinay, Weipeng Wu, Prabesh Bajracharya, Duy Quang To, Anthony Johnson, Anderson Janotti, Garnett W. Bryant, Lars Gundlach, M. Benjamin Jungfleisch, and Ramesh C. Budhani. “Light and Microwave Driven Spin Pumping across FeGaB–BiSb Interface.” Physical Review Materials 5, no. 12 (December 16, 2021): 124410. https://doi.org/10.1103/PhysRevMaterials.5.124410.en_US
ISSN2475-9953
URLhttps://udspace.udel.edu/handle/19716/30617
Languageen_USen_US
PublisherPhysical Review Materialsen_US
TitleLight and microwave driven spin pumping across FeGaB–BiSb interfaceen_US
TypeArticleen_US
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