Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory
| Author(s) | Li, Tiantian | |
| Author(s) | Wang, Yong | |
| Author(s) | Li, Wei | |
| Author(s) | Mao, Dun | |
| Author(s) | Benmore, Chris J. | |
| Author(s) | Evangelista, Igor | |
| Author(s) | Xing, Huadan | |
| Author(s) | Li, Qiu | |
| Author(s) | Wang, Feifan | |
| Author(s) | Sivaraman, Ganesh | |
| Author(s) | Janotti, Anderson | |
| Author(s) | Law, Stephanie | |
| Author(s) | Gu, Tingyi | |
| Date Accessioned | 2023-04-18T15:46:23Z | |
| Date Available | 2023-04-18T15:46:23Z | |
| Publication Date | 2022-04-18 | |
| Description | This is the peer reviewed version of the following article: Li, T., Wang, Y., Li, W., Mao, D., Benmore, C. J., Evangelista, I., Xing, H., Li, Q., Wang, F., Sivaraman, G., Janotti, A., Law, S., Gu, T., Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory. Adv. Mater. 2022, 34, 2108261. https://doi.org/10.1002/adma.202108261, which has been published in final form at https://doi.org/10.1002/adma.202108261. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited. © 2022 Wiley-VCH GmbH. This research was featured in UDaily on 04/15/2024, available at: https://www.udel.edu/udaily/2024/april/tingyi-gu-national-science-foundation-career-optical-memory/ | |
| Abstract | The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous–crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In2Se3) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer “shear glide” and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline–crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. The nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In2Se3-covered layer, resulted from the combinations of material absorption and scattering. | |
| Sponsor | This work was funded by Army Research Office (W911NF2010078YIP). The authors thank M. Gerhold for the discussions of the project. Y.W. and S.L. acknowledge support from the U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (DE-SC0016380). C.B. and G.S. are supported by DOE Office of Science by Argonne National Laboratory under Contract No. DE- AC02-06CH11357. W.L. and A.J. are supported by NSF Early Career Development Program DMR-1652994, and made use of the XSEDE supercomputer facilities, National Science Foundation Grant No. ACI-1053575. W.L. is partially supported by the Laboratory Directed Research and Development Program of Los Alamos National Laboratory (LANL) under project number 20210087DR. LANL is operated by Triad National Security, LLC, for the National Nuclear Security Administration of the U.S. Department of Energy (Contract No. 89233218CNA000001). | |
| Citation | Li, T., Wang, Y., Li, W., Mao, D., Benmore, C. J., Evangelista, I., Xing, H., Li, Q., Wang, F., Sivaraman, G., Janotti, A., Law, S., Gu, T., Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory. Adv. Mater. 2022, 34, 2108261. https://doi.org/10.1002/adma.202108261 | |
| ISSN | 1521-4095 | |
| URL | https://udspace.udel.edu/handle/19716/32656 | |
| Language | en_US | |
| Publisher | Advanced Materials | |
| Keywords | all-optical switching | |
| Keywords | In 2Se 3 | |
| Keywords | optical memory | |
| Keywords | optical switching | |
| Keywords | structural phase transitions | |
| Title | Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory | |
| Type | Article |
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