High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

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Semiconductor Science and Technology
This paper reports on the demonstration of microwave power performance at 30 GHz on InAlN/GaN metal–insulator–semiconductor high electron mobility transistor (MISHEMT) on silicon substrate by using the Hf0.5Zr0.5O2 (HZO) as a gate dielectric. Compared with Schottky gate HEMT, the MISHEMT with a gate length (LG) of 50 nm presents a significantly enhanced performance with an ON/OFF current ratio (ION/IOFF) of 9.3 × 107, a subthreshold swing of 130 mV dec−1, a low drain-induced barrier lowing of 45 mV V−1, and a breakdown voltage of 35 V. RF characterizations reveal a current gain cutoff frequency (fT) of 155 GHz and a maximum oscillation frequency (fmax) of 250 GHz, resulting in high (fT × fmax)1/2 of 197 GHz and the record high Johnson's figure-of-merit (JFOM = fT × BV) of 5.4 THz V among the reported GaN MISHEMTs on Si. The power performance at 30 GHz exhibits a maximum output power of 1.36 W mm−1, a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO/InAlN/GaN MISHEMTs for the Ka-band application.
This is the Accepted Manuscript version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/acb2ea. This article will be embargoed until 02/01/2024.
GaN MISHEMT, current/power gain cutoff frequency, Johnson’s figure-of-merit, Power Density, Ka-Band
Cui, Peng, Neil Moser, Hang Chen, John Q. Xiao, Kelson D. Chabak, and Yuping Zeng. “High-Performance HZO/InAlN/GaN MISHEMTs for Ka-Band Application.” Semiconductor Science and Technology 38, no. 3 (February 2023): 035011. https://doi.org/10.1088/1361-6641/acb2ea.