Browsing by Author "Li, Zhigang"
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Item Near Zero-Threshold Voltage P-N Junction Diodes Based on Super-Semiconducting Nanostructured Ag/Al Arrays(Advanced Materials, 2023-03-29) Li, Zhigang; Li, Jiteng; Wang, Weike; Yan, Qijie; Zhou, Yongrui; Zhu, Luping; Cao, Bingqiang; Wei, BingqingSemiconductor devices are currently one of the most common energy consumption devices. Significantly reducing the energy consumption of semiconductor devices with advanced energy-efficient technologies is highly desirable. The discovery of super-semiconductors (SSCs) based on metallic bi-layer shell arrays provides an opportunity to realize ultra-low-power consumption semiconductor devices. As an example, the achievement of near zero-threshold voltage in p-n junction diodes based on super-semiconducting nanostructured Ag/Al arrays is reported, realizing ultra-low-power p-n junction diodes: ≈3 W per trillion diodes with a working voltage of 1 V or 30 mW per trillion diodes with an operating voltage of 0.1 V. In addition, the p-n junction diodes exhibit a high breakdown field of ≈1.1 × 106 V cm−1, similar to that of SiC and GaN, due to a robust built-in field driven by infrared light photons. The SSC p-n diodes with near zero-threshold voltage and high breakdown field allow access to ultra-low-power semiconducting transistors, integrated circuits, chips, etc.Item Plasmon-induced super-semiconductor at room temperature in nanostructured bimetallic arrays(Applied Physics Reviews, 2022-05-17) Li, Zhigang; Cui, Xiangke; Wang, Xiaowei; Wang, Zongpeng; Fang, Minghu; Feng, Shangshen; Liu, Yanping; Chen, Jigen; Wang, Tianle; Liu, Hengji; Xia, Zhenhai; Wei, BingqingSolid-state electrical conducting materials can be roughly categorized as superconductors, conductors, and semiconductors, depending on their conducting carriers, resistance, and band structures. This research reports the discovery of super-semiconductors, whose resistivity is 3–10 orders of magnitude lower than conventional semiconductors at room temperature. In addition, there is a transition from a metal state to a super-semiconducting state at near room temperatures, which is accompanied by an increase in hole carrier density and the mobility increase in electrons. For the first time, a hole-dominated carrier metal is observed in nanostructured bimetallic arrays near room temperature, and no other special conditions are required. Such a behavior is due to the generation of hot electrons and holes induced by metal plasmon resonance in the infrared range in the nanostructured bimetallic arrays. Our research empowers metals with semiconductor features and paves the way to realize ultra-low-power metal-based semiconductor devices.