Near Zero-Threshold Voltage P-N Junction Diodes Based on Super-Semiconducting Nanostructured Ag/Al Arrays
Date
2023-03-29
Journal Title
Journal ISSN
Volume Title
Publisher
Advanced Materials
Abstract
Semiconductor devices are currently one of the most common energy consumption devices. Significantly reducing the energy consumption of semiconductor devices with advanced energy-efficient technologies is highly desirable. The discovery of super-semiconductors (SSCs) based on metallic bi-layer shell arrays provides an opportunity to realize ultra-low-power consumption semiconductor devices. As an example, the achievement of near zero-threshold voltage in p-n junction diodes based on super-semiconducting nanostructured Ag/Al arrays is reported, realizing ultra-low-power p-n junction diodes: ≈3 W per trillion diodes with a working voltage of 1 V or 30 mW per trillion diodes with an operating voltage of 0.1 V. In addition, the p-n junction diodes exhibit a high breakdown field of ≈1.1 × 106 V cm−1, similar to that of SiC and GaN, due to a robust built-in field driven by infrared light photons. The SSC p-n diodes with near zero-threshold voltage and high breakdown field allow access to ultra-low-power semiconducting transistors, integrated circuits, chips, etc.
Description
This is the peer reviewed version of the following article: Li, Z., Li, J., Wang, W., Yan, Q., Zhou, Y., Zhu, L., Cao, B., Wei, B., Near Zero-Threshold Voltage P-N Junction Diodes Based on Super-Semiconducting Nanostructured Ag/Al Arrays. Adv. Mater. 2023, 35, 2210612. https://doi.org/10.1002/adma.202210612, which has been published in final form at https://doi.org/10.1002/adma.202210612. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited. This article will be embargoed until 03/29/2024.
Keywords
p-n junction diodes, threshold voltage, breakdown field, plasmon resonance, super-semiconductors
Citation
Li, Z., Li, J., Wang, W., Yan, Q., Zhou, Y., Zhu, L., Cao, B., Wei, B., Near Zero-Threshold Voltage P-N Junction Diodes Based on Super-Semiconducting Nanostructured Ag/Al Arrays. Adv. Mater. 2023, 35, 2210612. https://doi.org/10.1002/adma.202210612