Plasmon-induced super-semiconductor at room temperature in nanostructured bimetallic arrays

Abstract
Solid-state electrical conducting materials can be roughly categorized as superconductors, conductors, and semiconductors, depending on their conducting carriers, resistance, and band structures. This research reports the discovery of super-semiconductors, whose resistivity is 3–10 orders of magnitude lower than conventional semiconductors at room temperature. In addition, there is a transition from a metal state to a super-semiconducting state at near room temperatures, which is accompanied by an increase in hole carrier density and the mobility increase in electrons. For the first time, a hole-dominated carrier metal is observed in nanostructured bimetallic arrays near room temperature, and no other special conditions are required. Such a behavior is due to the generation of hot electrons and holes induced by metal plasmon resonance in the infrared range in the nanostructured bimetallic arrays. Our research empowers metals with semiconductor features and paves the way to realize ultra-low-power metal-based semiconductor devices.
Description
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Zhigang Li, Xiangke Cui, Xiaowei Wang, Zongpeng Wang, Minghu Fang, Shangshen Feng, Yanping Liu, Jigen Chen, Tianle Wang, Hengji Liu, Zhenhai Xia, and Bingqing Wei , "Plasmon-induced super-semiconductor at room temperature in nanostructured bimetallic arrays", Applied Physics Reviews 9, 021412 (2022) https://doi.org/10.1063/5.0087808 and may be found at https://doi.org/10.1063/5.0087808. This article will be embargoed until 05/17/2023.
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Citation
Zhigang Li, Xiangke Cui, Xiaowei Wang, Zongpeng Wang, Minghu Fang, Shangshen Feng, Yanping Liu, Jigen Chen, Tianle Wang, Hengji Liu, Zhenhai Xia, and Bingqing Wei , "Plasmon-induced super-semiconductor at room temperature in nanostructured bimetallic arrays", Applied Physics Reviews 9, 021412 (2022) https://doi.org/10.1063/5.0087808