Single-Mask Fabrication of Sharp SiOx Nanocones

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Author(s)Herrmann, Eric
Author(s)Wang, Xi
Date Accessioned2024-03-05T20:24:38Z
Date Available2024-03-05T20:24:38Z
Publication Date2023-11-28
DescriptionThis article was originally published in IEEE Transactions on Semiconductor Manufacturing. The version of record is available at: https://doi.org/10.1109/TSM.2023.3336169. © 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This article will be embargoed until 11/28/2025.
AbstractThe patterning of silicon and silicon oxide nanocones onto the surfaces of devices introduces interesting phenomena such as anti-reflection and super-transmissivity. While silicon nanocone formation is well-documented, current techniques to fabricate silicon oxide nanocones either involve complex fabrication procedures, non-deterministic placement, or poor uniformity. Here, we introduce a single-mask dry etching procedure for the fabrication of sharp silicon oxide nanocones with smooth sidewalls and deterministic distribution using electron beam lithography. Silicon oxide films deposited using plasma-enhanced chemical vapor deposition are etched using a thin alumina hard mask of selectivity > 88, enabling high aspect ratio nanocones with smooth sidewalls and arbitrary distribution across the target substrate. We further introduce a novel multi-step dry etching technique to achieve ultra-sharp amorphous silicon oxide nanocones with tip diameters of ~10 nm. The processes presented in this work may have applications in the fabrication of amorphous nanocone arrays onto arbitrary substrates or as nanoscale probes.
SponsorThis work was supported in part by the U.S. National Science Foundation under Grant 2128534.
CitationE. Herrmann and X. Wang, "Single-Mask Fabrication of Sharp SiOx Nanocones," in IEEE Transactions on Semiconductor Manufacturing, vol. 37, no. 1, pp. 87-92, Feb. 2024, doi: 10.1109/TSM.2023.3336169.
ISSN1558-2345
URLhttps://udspace.udel.edu/handle/19716/34099
Languageen_US
PublisherIEEE Transactions on Semiconductor Manufacturing
Keywordsangled sidewalls
Keywordsdry etch
Keywordsnanocones
Keywordssilica
Keywordssilicon oxide
Keywordssingle-mask
TitleSingle-Mask Fabrication of Sharp SiOx Nanocones
TypeArticle
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