Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy

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dc.contributor.authorKlenov, D. O.
dc.contributor.authorZide, J. M. O.
dc.contributor.orderedauthorKlenov, D. O., Zide, J. M. O.
dc.contributor.udauthorZide, J. M. O. (orcid.org/0000-0002-6378-7221)
dc.date.accessioned2014-08-26T01:48:09Z
dc.date.available2014-08-26T01:48:09Z
dc.date.copyrightCopyright © 2011 American Institute of Physics
dc.date.issued2011
dc.descriptionFinal published versionen_US
dc.description.abstractThe structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth.en_US
dc.description.departmentUniversity of Delaware. Department of Materials Science and Engineering.
dc.identifier.citationKlenov, D. O., & Zide, J. M. O. (2011). Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy. Applied Physics Letters, 99(14) doi:10.1063/1.3645632
dc.identifier.doihttp://dx.doi.org/10.1063/1.3645632
dc.identifier.issn0003-6951
dc.identifier.urihttp://udspace.udel.edu/handle/19716/13123
dc.languageEnglish (United States)
dc.publisherAmerican Institute of Physicsen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.sourceApplied Physics Letters
dc.source.urihttp://scitation.aip.org/content/aip/journal/apl/browse
dc.titleStructure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopyen_US
dc.typeArticleen_US

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