Tuning of spin relaxation and the Kondo effect in copper thin films by ionic gating
Date
2022-08-11
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Physical Review B
Abstract
Spin relaxation length is a fundamental material parameter that influences all aspects of spin dependent transport. The ability to tune the spin relaxation length leads to novel spintronic phenomena and functionalities. We explore the tunability of the spin relaxation length in the mesoscopic Cu channels of nonlocal spin valves by using the ionic gating technique via a Li+ containing solid polymer electrolyte. At 5 K, the Cu spin relaxation length λCu is tuned reversibly between 670 and 410 nm and the Cu resistivity ρCu is tuned by 9%. The strength of the Kondo effect due to the Fe impurities in Cu is tuned by one order of magnitude. At 295 K, λCu is tuned between 380 and 300 nm and ρCu is tuned by 7%. A gradual amplification of the tuning ranges by repeated gate cycling is observed and clearly suggests an electrochemical origin. Tunable spin relaxation in simple metals enriches functionalities in metal-based spintronics and shines light on fundamental spin relaxation mechanisms.
Description
This article was originally published in Physical Review B. The version of record is available at: https://doi.org/10.1103/PhysRevB.106.085118
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Citation
Shen, Xingyu, Yunjiao Cai, Yizheng Wu, and Yi Ji. “Tuning of Spin Relaxation and the Kondo Effect in Copper Thin Films by Ionic Gating.” Physical Review B 106, no. 8 (August 11, 2022): 085118. https://doi.org/10.1103/PhysRevB.106.085118.