A Physics-Based Model of Vertical TFET--Part I: Modeling of Electric Potential

Author(s)Cheng, Qi
Author(s)Khandelwal, Sourabh
Author(s)Zeng, Yuping
Date Accessioned2022-06-13T19:49:22Z
Date Available2022-06-13T19:49:22Z
Publication Date2022-05-13
Description© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
AbstractA physics-based model for the electric potential of vertical TFET is presented in this article. The electric potential formula is derived for the first time from the multi-branch general solutions of Poisson's equation for TFET. The effect of electron inversion charge in the channel is taken into account. A novel approach incorporating the effect of hole mobile charge in the source depletion region is proposed. The model's accuracy is significantly improved compared with the previous source's fully depleted approximation. The model is proven to be accurate in all operating regions. The model's results are verified with TCAD simulation for different structural and material parameters.en_US
SponsorThis work was supported in part by the NASA International Space Station under Grant 80NSSC20M0142 and in part by Air Force Office of Scientific Research under Grant FA9550-19-1-0297 and Grant FA9550-21-1-0076.en_US
CitationQ. Cheng, S. Khandelwal and Y. Zeng, "A Physics-Based Model of Vertical TFET--Part I: Modeling of Electric Potential," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2022.3172929.en_US
ISSN1557-9646
URLhttps://udspace.udel.edu/handle/19716/30985
Languageen_USen_US
PublisherIEEE Transactions on Electron Devicesen_US
KeywordsCompact modelen_US
Keywordsline tunnelingen_US
KeywordsPoisson's equationen_US
Keywordsvertical TFETen_US
TitleA Physics-Based Model of Vertical TFET--Part I: Modeling of Electric Potentialen_US
TypeArticleen_US
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