A Physics-Based Model of Vertical TFET--Part I: Modeling of Electric Potential

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dc.contributor.authorCheng, Qi
dc.contributor.authorKhandelwal, Sourabh
dc.contributor.authorZeng, Yuping
dc.date.accessioned2022-06-13T19:49:22Z
dc.date.available2022-06-13T19:49:22Z
dc.date.issued2022-05-13
dc.description© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_US
dc.description.abstractA physics-based model for the electric potential of vertical TFET is presented in this article. The electric potential formula is derived for the first time from the multi-branch general solutions of Poisson's equation for TFET. The effect of electron inversion charge in the channel is taken into account. A novel approach incorporating the effect of hole mobile charge in the source depletion region is proposed. The model's accuracy is significantly improved compared with the previous source's fully depleted approximation. The model is proven to be accurate in all operating regions. The model's results are verified with TCAD simulation for different structural and material parameters.en_US
dc.description.sponsorshipThis work was supported in part by the NASA International Space Station under Grant 80NSSC20M0142 and in part by Air Force Office of Scientific Research under Grant FA9550-19-1-0297 and Grant FA9550-21-1-0076.en_US
dc.identifier.citationQ. Cheng, S. Khandelwal and Y. Zeng, "A Physics-Based Model of Vertical TFET--Part I: Modeling of Electric Potential," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2022.3172929.en_US
dc.identifier.issn1557-9646
dc.identifier.urihttps://udspace.udel.edu/handle/19716/30985
dc.language.isoen_USen_US
dc.publisherIEEE Transactions on Electron Devicesen_US
dc.subjectCompact modelen_US
dc.subjectline tunnelingen_US
dc.subjectPoisson's equationen_US
dc.subjectvertical TFETen_US
dc.titleA Physics-Based Model of Vertical TFET--Part I: Modeling of Electric Potentialen_US
dc.typeArticleen_US

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