Role of Semiconductor Nanostructures in Photon Upconversion Applications

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Author(s)Cleveland, Jill M.
Author(s)Welsch, Tory A.
Author(s)Chase, D. Bruce
Author(s)Doty, Matthew F.
Date Accessioned2023-07-27T14:25:47Z
Date Available2023-07-27T14:25:47Z
Publication Date2023-04-28
DescriptionThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Optical Materials, copyright © 2023 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaom.3c00067. This article will be embargoed until 04/28/2024.
AbstractPhoton upconversion, a process in which multiple low-energy photons are absorbed and re-emitted as higher-energy photons, has recently received a significant amount of attention due to its potential utility across a wide range of optical applications. Traditionally, two types of materials have been used for photon upconversion applications: lanthanide-doped nanocrystals and triplet–triplet annihilation molecules. While these systems have demonstrated good upconversion efficiencies, they both suffer from some limitations, particularly in spectral utilization. In this review, we will highlight the ways semiconductor nanocrystals have been integrated into existing upconverison platforms to address their limitations and improve their usability for some specific upconversion applications. Additionally, we will discuss the recent development of upconversion platforms based entirely on semiconductor nanostructures. These systems rely on the size-, shape-, and composition-dependent optical properties of semiconductors to design upconverting materials with the necessary electronic structure for a specific application. We discuss the current status of these hybrid and pure semiconductor-based upconverters and suggest future directions for further improving their upconversion performance.
SponsorThe authors acknowledge support from the Delaware Energy Institute. T.A.W. and J.M.C. acknowledge support from the Delaware Space Grant College and Fellowship program (NASA Grant 80NSSC20M0045). M.F.D. acknowledges partial support from the National Science Foundation through the University of Delaware Materials Research Science and Engineering Center (MRSEC, DMR-2011824), including partial support of this project through the MRSEC-affiliated Partnership for Research and Education (PREM) in Soft Matter Research & Technology and Quantum Confinement Materials Design (SMaRT QD, DMR-2122158).
CitationCleveland, Jill M., Tory A. Welsch, D. Bruce Chase, and Matthew F. Doty. “Role of Semiconductor Nanostructures in Photon Upconversion Applications.” ACS Applied Optical Materials 1, no. 4 (April 28, 2023): 810–24. https://doi.org/10.1021/acsaom.3c00067.
ISSN2771-9855
URLhttps://udspace.udel.edu/handle/19716/33037
Languageen_US
PublisherACS Applied Optical Materials
Keywordsupconversion
Keywordssemiconductor
Keywordsquantum dots
Keywordsnanoparticles
Keywordslanthanide
Keywordstriplet−triplet annihilation
KeywordsTTA
TitleRole of Semiconductor Nanostructures in Photon Upconversion Applications
TypeArticle
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