Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High-Entropy Oxides
| Author(s) | Ahn, Minhyung | |
| Author(s) | Park, Yongmo | |
| Author(s) | Lee, Seung Hwan | |
| Author(s) | Chae, Sieun | |
| Author(s) | Lee, Jihang | |
| Author(s) | Heron, John T. | |
| Author(s) | Kioupakis, Emmanouil | |
| Author(s) | Lu, Wei D. | |
| Author(s) | Phillips, Jamie D. | |
| Date Accessioned | 2021-12-20T20:07:38Z | |
| Date Available | 2021-12-20T20:07:38Z | |
| Publication Date | 2021-04-15 | |
| Description | This article was originally published in Advanced Electronic Materials. The version of record is available at: https://doi.org/10.1002/aelm.202001258 | en_US |
| Abstract | Memristors have emerged as transformative devices to enable neuromorphic and in-memory computing, where success requires the identification and development of materials that can overcome challenges in retention and device variability. Here, high-entropy oxide composed of Zr, Hf, Nb, Ta, Mo, and W oxides is first demonstrated as a switching material for valence change memory. This multielement oxide material provides uniform distribution and higher concentration of oxygen vacancies, limiting the stochastic behavior in resistive switching. (Zr, Hf, Nb, Ta, Mo, W) high-entropy-oxide-based memristors manifest the “cocktail effect,” exhibiting comparable retention with HfO2- or Ta2O5-based memristors while also demonstrating the gradual conductance modulation observed in WO3-based memristors. The electrical characterization of these high-entropy-oxide-based memristors demonstrates forming-free operation, low device and cycle variability, gradual conductance modulation, 6-bit operation, and long retention which are promising for neuromorphic applications. | en_US |
| Sponsor | M.A. and Y.P. contributed equally to this work. This work was supported by the National Science Foundation under Grant No. DMR-1810119. The device fabrication was performed in part at the University of Michigan Lurie Nanofabrication Facility. The authors acknowledge the financial support of the University of Michigan College of Engineering and NSF grant #DMR-0420785, and technical support from the Michigan Center for Materials Characterization. The calculations used Comet and Data Oasis at the San Diego Supercomputer Center (SDSC) through allocation TG-DMR200031, an Extreme Science and Engineering Discovery Environment (XSEDE) user facility supported by National Science Foundation grant number ACI-1548562. | en_US |
| Citation | Ahn, M., Park, Y., Lee, S. H., Chae, S., Lee, J., Heron, J. T., Kioupakis, E., Lu, W. D., Phillips, J. D., Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High-Entropy Oxides. Adv. Electron. Mater. 2021, 7, 2001258. https://doi.org/10.1002/aelm.202001258 | en_US |
| ISSN | 2199-160X | |
| URL | https://udspace.udel.edu/handle/19716/29780 | |
| Language | en_US | en_US |
| Publisher | Advanced Electronic Materials | en_US |
| Keywords | first-principles calculations | en_US |
| Keywords | high-entropy oxides | en_US |
| Keywords | memristors | en_US |
| Keywords | neuromorphic computing | en_US |
| Keywords | pulsed laser deposition | en_US |
| Title | Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High-Entropy Oxides | en_US |
| Type | Article | en_US |