Physical Analysis of VO2 Films Grown by Atomic Layer Deposition and RF Magnetron Sputtering
Date
2014-04-30
Journal Title
Journal ISSN
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Publisher
The Electrochemical Society
Abstract
Among the many vanadium suboxides and different stoichiometries, VO2 has received considerable attention due to its remarkable
metal-insulator transition (MIT) behavior, which causes a significant reversible change in its electrical and optical properties
occurring across the phase transition at 67◦C. The initially amorphous VO2 thin films were fabricated by the emerging, Atomic Layer
Deposition (ALD) technique with (tetrakis[ethylmethylamino]vanadium) {V(NEtMe)4} as precursor and H2O vapor as oxidation
agent. For benchmarking we have also used the RF Magnetron Sputtering technique to deposit metallic vanadium thin films, which
were later oxidized during furnace annealing. Post annealing of the as-deposited ALD films was performed in order to obtain the
technologically important form of crystallized VO2 thin films using furnace annealing. All film depositions were carried out on
native oxide covered (100) Si substrates. The conditions for successful furnace annealing are reported in terms of temperature and
annealing gas composition and the physical characterization results are presented.
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Citation
Tangirala, Madhavi, et al. "Physical Analysis of VO2 Films Grown by Atomic Layer Deposition and RF Magnetron Sputtering." ECS Journal of Solid State Science and Technology 3.6 (2014): N89-N94.