Open Access Publications
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Open access publications by faculty, staff, postdocs, and graduate students from the Institute of Energy Conversion.
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Item Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells(IEEE Journal of Photovoltaics, 2023-12-11) Mouri, Tasnim Kamal; Upadhyaya, Ajay; Rohatgi, Ajeet; Ok, Young-Woo; Upadhyaya, Vijaykumar; Rounsaville, Brian; Hua, Amandee; Hauschild, Dirk; Weinhardt, Lothar; Heske, Clemens; Das, Ujjwal K.This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ∼20% and a V OC of ∼650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760 °C contact firing process degrades the S-passivation quality. The surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.Item Smart PV Inverter Cyberattack Detection Using Hardware-in-the-Loop Test Facility(IEEE Access, 2023-08-23) Kaewnukultorn, Thunchanok; Sepúlveda-Mora, Sergio B.; Broadwater, Robert; Zhu, Dan; Tsoutsos, Nektarios G.; Hegedus, StevenThis paper evaluates residential smart photovoltaic (PV) inverters’ responses to cyberattacks and assesses the performance of an intrusion detection strategy for smart grid devices by comparing time-series power flow results from a simulation application called Faster Than Real-Time (FTRT) Simulator to measurements from a Power Hardware-in-the-Loop (P-HIL) laboratory as a testbed. Twenty different cyberattacks from three classes - Denial of Service (DoS), Intermittent attack, and Modification - were designed and tested with grid-tied smart inverters in order to study the inverters’ responses to malicious activities. The intrusion detection strategy was developed using a comparison between the predicted PV power output from FTRT and the power flows measured from P-HIL laboratory through the API interface. Real and reactive power thresholds were assigned based on a number of repeated experiments to ensure the applicability of the thresholds. The results showed that inverters from different manufacturers have their own unique responses which could be detected by the power flow measurements. Our detection method could identify over 94% of actual malicious actions and 7.4% of no-attack hours are detected as false positives. Out of 38 under-attack hours, 2 undetected hours are due to the intermittent attacks. Different attacks can be detected based on the targeted components of the complex power that attackers are aiming to cause disturbances. Our findings additionally show that DoS can be noticed immediately after the devices have been sabotaged, and they can be detected from the active power analysis. However, modification attack detection will depend more on the reactive power measurements, while intermittent attacks remain the most challenging for the proposed detection method since the objective of intermittent attacks is to create an oscillation of the complex power components which need a relatively high time resolution for the measurement.Item Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se2 Solar Cells Fabricated using Different Methods(Solar RRL, 2023-06-06) Bothwell, Alexandra M.; Wands, Jake; Miller, Michael F.; Kanevce, Ana; Paetel, Stefan; Tsoulka, Polyxeni; Lepetit, Thomas; Barreau, Nicolas; Valdes, Nicholas; Shafarman, William; Rockett, Angus; Arehart, Aaron R.; Kuciauskas, DariusVoltage losses reduce the photovoltaic conversion efficiency of thin-film solar cells and are a primary efficiency limitation in Cu(In,Ga)Se2. Herein, voltage loss analysis of Cu(In,Ga)Se2 solar cells fabricated at three institutions with variation in process, bandgap, absorber structure, postdeposition treatment (PDT), and efficiency is presented. Nonradiative voltage losses due to Shockley–Read–Hall charge carrier recombination dominate and constitute >75% of the total compared to <25% from radiative voltage losses. The radiative voltage loss results from nonideal absorption and carriers in band tails that stem from local composition-driven potential fluctuations. It is shown that significant bulk lifetime improvements are achieved for all alkali PDT processed absorbers, chiefly associated with reductions in nonradiative recombination. Primary voltage loss contributions (radiative and nonradiative) change little across fabrication processes, but variation in submechanisms (bulk lifetime, net acceptor concentration, and interface recombination) differentiate nonradiative loss pathways in this series of solar cells.Item Inner shell excitation by strong field laser rescattering: optimal laser conditions for high energy recollision(Journal of the Optical Society of America B, 2021-11-15) Kelley, L.; Germain, Z.; Jones, E. C.; Milliken, D.; Walker, Barry C.We address the challenge of finding the optimal laser intensity and wavelength to drive high-energy, strong field rescattering and report the maximum yields of K-shell and LI-shell hole creation. Surprisingly, our results show laser-driven rescattering is able to create inner shell holes in all atoms from lithium to uranium with the interaction spanning from the deep IR to x-ray free electron laser sources. The calculated peak rescattering follows a simple scaling with the atomic number and laser wavelength. The results show it is possible to describe the ideal laser intensity and wavelength for general high-energy laser rescattering processes.