Browsing by Author "Petropoulos, J. P., Zhong, Y., Zide, J. M. O."
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Item Optical and electrical characterization of InGaBiAs for use as a new mid-infrared optoelectronic material(American Institute of Physics, 2011) Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O.; Petropoulos, J. P., Zhong, Y., Zide, J. M. O.; Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O. (orcid.org/0000-0002-6378-7221)In0.53Ga0.47BixAs1 x films were grown on InP:Fe substrates by molecular beam epitaxy, with Bi concentrations up to x¼3.60%. Bi content in the epilayers was determined by Rutherford backscattering spectroscopy, and channeling measurements show Bi incorporating substitutionally. Unlike previous work, electrical and optical data are obtained for all samples. A redshift in peak wavelength of about 56 meV/%Bi was observed using spectrophotometry. The valence band anti-crossing model is applied, showing InyGa1 yBixAs1 x lattice-matched to InP is possible by varying the composition, with a theoretical cutoff wavelength of about 6 lm.