Browsing by Author "Khandelwal, Sourabh"
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Item A Physically-Based Model of Vertical TFET--Part II: Drain Current Model(IEEE Transactions on Electron Devices, 2022-02-08) Cheng, Qi; Khandelwal, Sourabh; Zeng, YupingA physically based model for the tunneling current of vertical tunneling field transistors (TFET) is proposed. In part I, the expression of φ1D(x,) is derived from the multi-branch general solutions of Poisson's equation. The model's results are verified with TCAD simulation for transistors with different materials, device geometries, and biases. In this article, a surface potential model is validated at different device regions which include channel and drain. Based on the above two electric potential models, Kane's tunneling formula is utilized for the calculation of band-to-band tunneling current. The proposed current model is valid for all transistors' operating regions. The quantum effect on the band-structure parameters is taken into account in the modeling of InAs vertical TFET. It is shown that the channel thickness needs to be optimized to achieve the highest drive current.Item A Physics-Based Model of Vertical TFET--Part I: Modeling of Electric Potential(IEEE Transactions on Electron Devices, 2022-05-13) Cheng, Qi; Khandelwal, Sourabh; Zeng, YupingA physics-based model for the electric potential of vertical TFET is presented in this article. The electric potential formula is derived for the first time from the multi-branch general solutions of Poisson's equation for TFET. The effect of electron inversion charge in the channel is taken into account. A novel approach incorporating the effect of hole mobile charge in the source depletion region is proposed. The model's accuracy is significantly improved compared with the previous source's fully depleted approximation. The model is proven to be accurate in all operating regions. The model's results are verified with TCAD simulation for different structural and material parameters.