Institute of Energy Conversion
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Item Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells(IEEE Journal of Photovoltaics, 2023-12-11) Mouri, Tasnim Kamal; Upadhyaya, Ajay; Rohatgi, Ajeet; Ok, Young-Woo; Upadhyaya, Vijaykumar; Rounsaville, Brian; Hua, Amandee; Hauschild, Dirk; Weinhardt, Lothar; Heske, Clemens; Das, Ujjwal K.This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ∼20% and a V OC of ∼650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760 °C contact firing process degrades the S-passivation quality. The surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.