First-principles study of surface charging in LaAlO3/SrTiO3 heterostructures

Author(s)Krishnaswamy, K.
Author(s)Dreyer, C. E.
Author(s)Janotti, Anderson
Author(s)Van de Walle, Chris G.
Ordered AuthorK. Krishnaswamy, C. E. Dreyer, A. Janotti, and C. G. Van de Walle
UD AuthorJanotti, Andersonen_US
Date Accessioned2016-06-28T14:09:19Z
Date Available2016-06-28T14:09:19Z
Copyright DateCopyright ©2015 American Physical Societyen_US
Publication Date2015-08-19
DescriptionPublsiher's PDFen_US
AbstractThe two-dimensional electron gas (2DEG) observed at the interface between LaAlO3 (LAO) and SrTiO3 (STO) is known to be very sensitive to the proximity of the LaAlO3 surface and the conditions to which the surface is exposed. We use first-principles calculations to study surface reconstructions on LAO films, taking into account that the LAO surface can be charged. The results for the charged surfaces and for the coupling between the surface and the 2DEG enable us to account not only for the behavior of the 2DEG as a function of thickness of the LAO layer, but simultaneously determine the stable terminations and reconstructions on the LAO surface under a variety of conditions. Our studies of charged surfaces are based on an extension of the methodology of A. Y. Lozovoi et al. [J. Chem. Phys. 115, 1661 (2001)]. From the calculated electronic structure of the unreconstructed (but relaxed) AlO2 and LaO surface terminations of LAO, we find surface states having excess holes (AlO2 termination) or excess electrons (LaO termination). This result is central to understanding the mechanism of 2DEG formation, and is consistent with a 2DEG of density 3.3 × 1014 cm−2 being intrinsic to the LaO-TiO2 interface in the LAO/STO system. We explore the effects of the Al-adatom, O-vacancy, and H-adatom surface reconstructions on the 2DEG density, and find that the stability of different reconstructions is tied to the thickness of the LAO layer as well as the surface exposure conditions. We find that including the effects of charging of the surface significantly stabilizes the AlO2 termination versus the LaO termination. Overall, our methodology has the advantage of decoupling first-principles calculations for the interface from those for the charged surface, and constitutes a general approach that can be applied to the commonly occurring problem of charge exchange between the surface and the interface of a thin film with a substrate, or between the surface and defects/impurities in the bulk of a material. DOI: 10.1103/PhysRevB.en_US
DepartmentUniversity of Delaware. Department of Materials Science and Engineering.en_US
CitationKrishnaswamy, K., et al. "First-principles study of surface charging in LaAlO 3/SrTiO 3 heterostructures." Physical Review B 92.8 (2015): 085420.en_US
DOI10.1103/PhysRevB.92.085420en_US
ISSN2469-9950 ; e- 2469-9969en_US
URLhttp://udspace.udel.edu/handle/19716/17984
Languageen_USen_US
PublisherAmerican Physical Societyen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourcePhysical Review Ben_US
dc.source.urihttp://journals.aps.org/prb/en_US
TitleFirst-principles study of surface charging in LaAlO3/SrTiO3 heterostructuresen_US
TypeArticleen_US
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