Klenov, D. O.Zide, J. M. O.2014-08-262014-08-26Copyright2011Klenov, D. O., & Zide, J. M. O. (2011). Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy. Applied Physics Letters, 99(14) doi:10.1063/1.36456320003-6951http://udspace.udel.edu/handle/19716/13123Final published versionThe structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth.Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Articlehttp://dx.doi.org/10.1063/1.3645632