Petropoulos, J. P.Zhong, Y.Zide, J. M. O.2014-08-262014-08-26Copyright2011Petropoulos, J. P., Zhong, Y., & Zide, J. M. O. (2011). Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material. Applied Physics Letters, 99(3) doi:10.1063/1.36144760003-6951http://udspace.udel.edu/handle/19716/13124Final published versionIn0.53Ga0.47BixAs1 x films were grown on InP:Fe substrates by molecular beam epitaxy, with Bi concentrations up to x¼3.60%. Bi content in the epilayers was determined by Rutherford backscattering spectroscopy, and channeling measurements show Bi incorporating substitutionally. Unlike previous work, electrical and optical data are obtained for all samples. A redshift in peak wavelength of about 56 meV/%Bi was observed using spectrophotometry. The valence band anti-crossing model is applied, showing InyGa1 yBixAs1 x lattice-matched to InP is possible by varying the composition, with a theoretical cutoff wavelength of about 6 lm.Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Articlehttp://dx.doi.org/10.1063/1.3614476