Zhong, Y.Dongmo, P. B.Petropoulos, J. P.Zide, J. M. O.2014-08-262014-08-26Copyright2012Zhong, Y., Dongmo, P. B., Petropoulos, J. P., & Zide, J. M. O. (2012). Effects of molecular beam epitaxy growth conditions on composition and optical properties of in xGa 1-xBi yAs 1-y. Applied Physics Letters, 100(11) doi:10.1063/1.36950660003-6951http://udspace.udel.edu/handle/19716/13121Final published versionWe describe the growth conditions of InxGa1 xBiyAs1 y (lattice-mismatched and matched) on InP substrates by molecular beam epitaxy and the resulting properties. Due to their anomalously narrow bandgaps and the presence of bismuth, these materials are promising for optoelectronics and thermoelectrics. Low growth temperature and moderate As/Bi beam equivalent pressure ratios are beneficial for Bi incorporation, in good qualitative agreement with GaBiyAs1 y on GaAs. Up to 6.75% bismuth is incorporated. High resolution x-ray diffraction and reciprocal space mapping show that InxGa1 xBiyAs1 y samples exhibit good crystalline quality and zero relaxation. The band gap is reduced in agreement with theoretical predictions. Lattice-matched samples have been produced with lattice mismatch 0.21%.Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Article10.1063/1.3695066