Zhang, DainanWen, TianlongXiong, YingQiu, DonghongWen, Qiye2017-09-012017-09-01Copyright2017-02-14Zhang, D., Wen, T., Xiong, Y. et al. Nano-Micro Lett. (2017) 9: 29. https://doi.org/10.1007/s40820-017-0132-x.2311-6706 ; e- 2150-5551http://udspace.udel.edu/handle/19716/21632Publisher's PDFVO2 thin films were grown on silicon substrates using Al2O3 thin films as the buffer layers. Compared with direct deposition on silicon, VO2 thin films deposited on Al2O3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al2O3/VO2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO2 thin films can be induced by an electrical field.en-USThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.Article10.1007/s40820-017-0132-x