Design optimization of the double delta doping HEMT

Abstract

In this thesis, the DC performance of the high-electron mobility transistor (HEMT) on GaAs substrate is studied based on a Sentaurus TCAD simulation. Poisson's equation, carrier temperature, and carrier continuity equations are included in the hydrodynamic model, and higher order effects such as electron velocity saturation and velocity overshoot are considered. The impact of double delta-doping layers on device performances are discussed. Further optimization methods like buried source and drain structure and channel compositions are proposed. It shows that the Off-current is reduced by 50% at a low drain bias and the On-current is increased by 26% at a high drain voltage bias.