THE CHARACTERIZATION AND DEVICE FABRICATION OF GERMANIUM-TIN AND TITANIUM DIOXIDE HETEROJUNCTION
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Abstract
GeSn alloy, a group-IV semiconductor known for its tunable bandgap, offers promising performance in near- and mid-infrared optoelectronic applications. However, its low thermal stability and doping limitations also lead to challenges in device fabrication. To address the issue, Titanium dioxide (TiO2), with its reasonable chemical stability, capability for low-temperature deposition, and optical transparency in visible and near-infrared light, serves as a viable n-type component for GeSn alloy.
In this research, a Heterojunction photodiode incorporating p-type GeSn and n-type TiO2 is fabricated to investigate the performance of GeSn and TiO2 incorporation. X-ray diffraction (XRD) is used to analyze the structural characteristics of various materials, while reciprocal space mapping (RSM) is employed to investigate the properties of GeSn films. Electrical measurements, such as current–voltage (I–V) analysis and CTLM testing, are conducted to evaluate device performance and contact resistance.