Advancements in germanium tin material characterizations and fabrication process technologies for photodetector and transistor applications
| Author(s) | Zhao, Haochen | |
| Date Accessioned | 2025-05-27T18:21:23Z | |
| Date Available | 2025-05-27T18:21:23Z | |
| Publication Date | 2025 | |
| SWORD Update | 2025-05-18T16:01:30Z | |
| Abstract | Germanium tin (GeSn) alloys have emerged as promising materials for optoelectronic devices operating in the Short-wave infrared (SWIR) and mid-infrared (MIR) and even regions, offering unique advantages over conventional semiconductor materials. The incorporation of tin (Sn) into germanium (Ge) allows for the tunability of the bandgap, enabling efficient light emission and absorption across a wide range of wavelengths, making GeSn ideal for SWIR and MIR applications. This material's compatibility with complementary metal-oxide-semiconductor (CMOS) technology further enhances its potential for integration into cost-effective, scalable photonic and electronic systems. Recent advancements in the growth, characterization, and doping of GeSn have demonstrated enhanced optical properties, including direct bandgap behavior in the SWIR and MIR spectral ranges, high carrier mobility, and improved device performance. Notably, GeSn also shows great promise in transistor applications, where the alloy's tunable properties allow for the development of high-performance field-effect transistors (FETs) with superior switching characteristics and enhanced electron mobility. The material's potential for integration in light-emitting diodes (LEDs), lasers, photodetectors (PDs), modulators, and transistors operating in the SWIR and MIR regions is unlocking new opportunities in telecommunications, environmental sensing, medical diagnostics, and infrared imaging. This thesis explores the progress in GeSn material development, device fabrication techniques, and its application in both optoelectronic devices and high-speed transistors, highlighting its role in advancing the performance and functionality of SWIR and MIR technologies. | |
| Advisor | Zeng, Yuping | |
| Degree | Ph.D. | |
| Department | University of Delaware, Department of Electrical and Computer Engineering | |
| Unique Identifier | 1523872275 | |
| URL | https://udspace.udel.edu/handle/19716/36228 | |
| Language | en | |
| Publisher | University of Delaware | |
| URI | https://www.proquest.com/pqdtlocal1006271/dissertations-theses/advancements-germanium-tin-material/docview/3205237202/sem-2?accountid=10457 | |
| Keywords | Germanium tin | |
| Keywords | Molecular beam epitaxy | |
| Keywords | Nanofabrication | |
| Keywords | Photodetector | |
| Keywords | Short-wave infrared applications | |
| Keywords | Transistor | |
| Title | Advancements in germanium tin material characterizations and fabrication process technologies for photodetector and transistor applications | |
| Type | Thesis |