Simulation and comparison of high speed GaAsSb-InP and InGaAs-InP uni-traveling-carrier photodiodes
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University of Delaware
Abstract
In this thesis, the performance of GaAsSb/InP and InGaAs/InP UTC-PD’s are investigated by performing both optical and electrical simulations in Lumerical FDTD and Device software. Absorption material GaAsSb is replaced with InGaAs for the same reference structure. Voltage-current relation, responsivity as well as frequency response are obtained from the steady-state and transient simulations that are done for optical communication wavelengths which are 1.3 μm and 1.55 μm. Also, the systematics behind the simulation flow are presented.