Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect

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Author(s)Bradicich, Adelaide
Author(s)Petluru, Priyanka
Author(s)Davari, Shiva
Author(s)Zhao, Haochen
Author(s)Gangwal, Siddhant
Author(s)Liu, Chia-You
Author(s)Vasileska, Dragica
Author(s)Zeng, Yuping
Author(s)Churchill, Hugh
Author(s)Li, Jiun-Yun
Author(s)Lilly, Michael P.
Author(s)Lu, Tzu-Ming
Date Accessioned2025-01-03T17:07:26Z
Date Available2025-01-03T17:07:26Z
Publication Date2024-11-18
DescriptionThis article was originally published in Journal of Applied Physics. The version of record is available at: https://doi.org/10.1063/5.0233728. © 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0233728
AbstractAlloying germanium with tin offers a means to modulate germanium’s electronic structure, enabling a greater degree of control over quantum properties such as the retention of the phase or spin of the electron wave. However, the extent to which the presence of high dopant concentrations in GeSn alters these quantum behaviors is poorly understood. Here, we investigate the role of dopant concentrations on phase coherence through measurements of the weak antilocalization (WAL) effect at temperatures between 30 mK and 10 K in p-GeSn (8%) thin films, which were doped to a series of carrier densities on the order of 1012 cm 2. Phase coherence and spin–orbit lengths were extracted from the magnetoconductivities using the 2D Hikami–Larkin–Nagaoka model. Phase coherence lengths peaked at 577, 593, and 737 nm for the low-, mid-, and high-density samples, while upper limits on the spin–orbit lengths of less than 25 nm were relatively independent of carrier density and temperature. The phase coherence lengths increased as the temperature decreased but changed only minimally with carrier density, contrary to common models of temperature-dependent inelastic scattering. Saturation of the phase coherence lengths occurred below 600 mK. Based on these findings, intrinsically generated inelastic scattering mechanisms such as two-level systems or impurity band scattering likely contribute to phase decoherence in these alloys. Our results provide insight into the inelastic scattering mechanisms of GeSn, while suggesting a need for further investigation into phase decoherence mechanisms in doped group-IV alloys.
SponsorThis work was supported as part of μ-ATOMS, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DE-SC0023412. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE's National Nuclear Security Administration under Contract No. DE-NA-0003525. This article has been authored by an employee of National Technology & Engineering Solutions of Sandia, LLC under Contract No. DE-NA0003525 with the U.S. Department of Energy (DOE). The employee owns all right, title and interest in and to the article and is solely responsible for its contents. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this article or allow others to do so, for United States Government purposes. The DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (https://www.energy.gov/downloads/doe-public-access-plan). This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government. S. D. acknowledges the MonArk NSF Quantum Foundry supported by the National Science Foundation Q-AMASE-i program under National Science Foundation Award No. DMR-1906383. H.Z. and Y.Z. acknowledge National Science Foundation Award No. 2328840. The authors would like to thank Professor Jin Hu at the University of Arkansas for his helpful discussions on the quantum transport behaviors presented in this work.
CitationBradicich, Adelaide, Priyanka Petluru, Shiva Davari, Haochen Zhao, Siddhant Gangwal, Chia-You Liu, Dragica Vasileska, et al. “Study of Phase Decoherence in GeSn (8%) through Measurements of the Weak Antilocalization Effect.” Journal of Applied Physics 136, no. 21 (December 7, 2024): 214301. https://doi.org/10.1063/5.0233728.
ISSN1089-7550
URLhttps://udspace.udel.edu/handle/19716/35685
Languageen_US
PublisherJournal of Applied Physics
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
Keywordsdoping
Keywordselectronic transport
Keywordsquantum effects
Keywordselectric measurements
Keywordsalloys
Keywordsthin films
Keywordsspin-orbit interactions
Keywordsinelastic scattering
TitleStudy of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
TypeArticle
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