The Effect of Surface Terminations on the Initial Stages of TiO2 Deposition on Functionalized Silicon
Date
2023-01-10
Journal Title
Journal ISSN
Volume Title
Publisher
ChemPhysChem
Abstract
As atomic layer deposition (ALD) emerges as a method to fabricate architectures with atomic precision, emphasis is placed on understanding surface reactions and nucleation mechanisms. ALD of titanium dioxide with TiCl4 and water has been used to investigate deposition processes in general, but the effect of surface termination on the initial TiO2 nucleation lacks needed mechanistic insights. This work examines the adsorption of TiCl4 on Cl−, H−, and HO− terminated Si(100) and Si(111) surfaces to elucidate the general role of different surface structures and defect types in manipulating surface reactivity of growth and non-growth substrates. The surface sites and their role in the initial stages of deposition are examined by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Density functional theory (DFT) computations of the local functionalized silicon surfaces suggest oxygen-containing defects are primary drivers of selectivity loss on these surfaces.
Graphical Abstract available at: https://doi.org/10.1002/cphc.202200724
Deposition of TiO2 from TiCl4 and water dosing cycles onto H- and Cl-terminated silicon surfaces is defined by the interaction of the adsorbate molecule with defects on these surfaces. The nature of these defects and their effect on selectivity of deposition are investigated.
Description
This is the peer reviewed version of the following article: Parke, T., Silva-Quinones, D., Wang, G. T., Teplyakov, A. V.“The Effect of Surface Terminations on the Initial Stages of TiO2 Deposition on Functionalized Silicon.” ChemPhysChem (2023): e202200724. https://doi.org/10.1002/cphc.202200724, which has been published in final form at https://doi.org/10.1002/cphc.202200724. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited. This article will be embargoed until 01/10/2024.
Keywords
TiO2 deposition, nucleation, silicon, functionalization, atomic resists
Citation
Parke, T., Silva-Quinones, D., Wang, G. T., Teplyakov, A. V. “The Effect of Surface Terminations on the Initial Stages of TiO2 Deposition on Functionalized Silicon.” ChemPhysChem (2023): e202200724. https://doi.org/10.1002/cphc.202200724