Modeling optical properties of thin film Cu(In,Ga)Se2 solar cells using spectroscopic ellipsometry

Author(s)Stephens, Scott H.
Date Accessioned2020-08-31T12:02:01Z
Date Available2020-08-31T12:02:01Z
Publication Date2006
AbstractIn this research, the optical properties of Cu(In, Ga)Se 2 thin film solar cells were modeled using variable angle spectroscopic ellipsometry and compared against established optical data from bulk materials. Mo, MoSe 2, Cu(In, Ga)Se 2 and US films were measured individually as the devices were formed layer by layer. Optical data, thickness, surface roughness, and the methodology of preparing and effectively modeling samples have been determined. Diffusion of Na from the Soda Lime glass substrate is evident in the optical constants of the Mo layer. The optical constants of the MoSe 2 layer were found to be dependent upon the deposition conditions. The bandgap of the US layer was higher when deposited on Cu(In, Ga)Se 2 surfaces than when deposited on Mo. This implies that greater lattice strain is present in the US layer of solar cell devices than that of US films previously measured in CdS/Mo structures.en_US
AdvisorBirkmire, Robert W.
DegreeM.S.
DepartmentUniversity of Delaware, Department of Physics and Astronomy
Unique Identifier83271598
URLhttps://udspace.udel.edu/handle/19716/27460
PublisherUniversity of Delawareen_US
URIhttps://login.udel.idm.oclc.org/login?url=https://www.proquest.com/docview/305323945?accountid=10457
dc.subject.lcshThin films -- Optical properties
dc.subject.lcshCopper
dc.subject.lcshIndium
dc.subject.lcshGallium
TitleModeling optical properties of thin film Cu(In,Ga)Se2 solar cells using spectroscopic ellipsometryen_US
TitleModeling optical properties of thin film copper(indium, gallium)selenide solar cells using spectroscopic ellipsometryen_US
TypeThesisen_US
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