High-quality polycrystalline vanadium dioxide thin films deposited via pulsed laser deposition with high uniformity and consistency

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dc.contributor.authorHuang, Zhixiang
dc.contributor.authorLaskowski,Kyle
dc.contributor.authorSitaram, Sai Rahul
dc.contributor.authorHerrmann, Eric
dc.contributor.authorNobi, S M Jahadun
dc.contributor.authorMa, Ke
dc.contributor.authorWang, Xi
dc.date.accessioned2025-10-14T18:35:03Z
dc.date.available2025-10-14T18:35:03Z
dc.date.issued2025-10-25
dc.descriptionThis article was originally published in Journal of Materials Science: Materials in Electronics. The version of record is available at: https://doi.org/10.1007/s10854-025-15921-6 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
dc.description.abstractVanadium dioxide (VO2) is a phase transition material that experiences significant shifts in electrical, optical, and mechanical properties near its transition temperature. Among various methods for depositing VO2 thin films, pulsed laser deposition (PLD) provides precise stoichiometric control, good versatility, and high consistency. In this work, we introduce an optimized PLD-based method for depositing high-quality polycrystalline VO2 thin films. Experimental results demonstrate a resistance change of over four orders of magnitude during the phase transition, accompanied by high uniformity, with a thickness variation of less than 2% across a 100 mm wafer, and reliable reproducibility over time.
dc.description.sponsorshipThis research was primarily supported by National Science Foundation through the University of Delaware Materials Research Science and Engineering Center DMR-2011824. Additional support was received from National Aeronautics and Space Administration Grant Number 80NSSC23M0076.
dc.identifier.citationHuang, Z., Laskowski, K., Sitaram, S.R. et al. High-quality polycrystalline vanadium dioxide thin films deposited via pulsed laser deposition with high uniformity and consistency. J Mater Sci: Mater Electron 36, 1850 (2025). https://doi.org/10.1007/s10854-025-15921-6
dc.identifier.issn1573-482X
dc.identifier.urihttps://udspace.udel.edu/handle/19716/36671
dc.language.isoen_US
dc.publisherJournal of Materials Science: Materials in Electronics
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleHigh-quality polycrystalline vanadium dioxide thin films deposited via pulsed laser deposition with high uniformity and consistency
dc.typeArticle

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