Plasmaless automated xenon difluoride MEMS etching system development and application
| Author(s) | Xuan, Guangchi | |
| Date Accessioned | 2020-08-19T12:02:29Z | |
| Date Available | 2020-08-19T12:02:29Z | |
| Publication Date | 2006 | |
| Abstract | Xenon Difluoride (XeF2) vapor is known to be able to spontaneously etch Si isotropically at high rates. This dry etching process does not require any plasma or catalyst and thus cause little or no damage to the delicate MEMS structures. And since XeF2 is comparatively cheap and very little are consumed during etching, this process is very cost-effective. An automated XeF2 MEMS Etching System was designed, built and calibrated. Detail description of the etcher system design and construction was given. Major components of the system were discussed. ☐ Ge was found to be etched by XeF2 using the etcher. Comprehensive etch studies on Si and Ge were conducted and etch rate at different XeF 2 pressures were accurately determined. XeF2 etched Ge around 5 times as fast as Si. ☐ Several applications of this XeF2 etcher such as Si deep etch and fabrication of cantilever beam was demonstrated. | en_US |
| Advisor | Kolodzey, James | |
| Degree | M.S. | |
| Department | University of Delaware, Department of Electrical and Computer Engineering | |
| Unique Identifier | 85784356 | |
| URL | https://udspace.udel.edu/handle/19716/27416 | |
| Publisher | University of Delaware | en_US |
| URI | https://search.proquest.com/docview/305323325?accountid=10457 | |
| dc.subject.lcsh | Xenon | |
| dc.subject.lcsh | Plasma etching | |
| dc.subject.lcsh | Silicon | |
| dc.subject.lcsh | Germanium | |
| Title | Plasmaless automated xenon difluoride MEMS etching system development and application | en_US |
| Type | Thesis | en_US |