Thin film lithium niobate modulators at 1064 NM for CMOS-compatible systems
| Author(s) | Jagatpal, Navarun | |
| Date Accessioned | 2021-12-16T14:01:07Z | |
| Date Available | 2021-12-16T14:01:07Z | |
| Publication Date | 2021 | |
| SWORD Update | 2021-08-11T16:06:06Z | |
| Abstract | Across the world, the telecommunications industry has deployed numerous systems for rapid transmission of data across long distances, including cell phone and internet networks. Photonic technologies and fiber-optic communications are ubiquitous in these systems because they allow for lower loss and greater energy efficiency than a conventional electrical transmission line. One photonic device that is crucial to these systems is the electro-optic modulator, which converts signals from the electrical domain to the optical domain at high speed. ☐ Lithium niobate is the material of choice for electro-optic modulators and many such devices have been demonstrated, in bulk lithium niobate at 1550 nm and 1064 nm, as well as thin-film-lithium-niobate (TFLN) at 1550 nm. This thesis presents the first analysis of electro-optic modulators in thin-film-lithium-niobate at shorter wavelengths, especially 1064 nm. Since the half-wave voltage (Vπ) is proportional to the wavelength, a modulator at 1064 nm has the notable advantage of a lower Vπ compared to a similar modulator at 1550 nm. Another significant advantage can be identified when considering the modulator as a component in a larger photonic system, such as an analog photonic link system or an imaging system. In such a system, the modulator would be used in conjunction with light-sensing components (photodetectors and/or image sensors). At 1550 nm, the light-sensing components must be made of III-V semiconductor materials, which are more expensive. However, a system implemented at 1064 nm can use silicon light-sensing components, which are available at lower cost and are CMOS-compatible. Thus, the modulators presented in this thesis open the door towards photonic systems in which the overall cost is reduced. | en_US |
| Advisor | Prather, Dennis W. | |
| Degree | M.S. | |
| Department | University of Delaware, Department of Electrical and Computer Engineering | |
| DOI | https://doi.org/10.58088/gm9r-3f76 | |
| Unique Identifier | 1288683561 | |
| URL | https://udspace.udel.edu/handle/19716/29556 | |
| Language | en | |
| Publisher | University of Delaware | en_US |
| URI | https://login.udel.idm.oclc.org/login?url=https://www.proquest.com/dissertations-theses/thin-film-lithium-niobate-modulators-at-1064-nm/docview/2572617077/se-2 | |
| Keywords | Lithium niobate | |
| Keywords | Microfabrication | |
| Keywords | Modulators | |
| Keywords | Optics | |
| Keywords | Photonics | |
| Keywords | Silicon nitride | |
| Title | Thin film lithium niobate modulators at 1064 NM for CMOS-compatible systems | en_US |
| Type | Thesis | en_US |