Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
Date
2017-02-14
Journal Title
Journal ISSN
Volume Title
Publisher
Springer Berlin Heidelberg
Abstract
VO2 thin films were grown on silicon substrates
using Al2O3 thin films as the buffer layers. Compared with
direct deposition on silicon, VO2 thin films deposited on
Al2O3 buffer layers experience a significant improvement
in their microstructures and physical properties. By optimizing
the growth conditions, the resistance of VO2 thin
films can change by four orders of magnitude with a
reduced thermal hysteresis of 4 C at the phase transition
temperature. The electrically driven phase transformation
was measured in Pt/Si/Al2O3/VO2/Au heterostructures. The
introduction of a buffer layer reduces the leakage current
and Joule heating during electrically driven phase transitions.
The C–V measurement result indicates that the phase
transformation of VO2 thin films can be induced by an
electrical field.
Description
Publisher's PDF
Keywords
Citation
Zhang, D., Wen, T., Xiong, Y. et al. Nano-Micro Lett. (2017) 9: 29. https://doi.org/10.1007/s40820-017-0132-x.