Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy
Date
2015
Authors
Opila, Robert Leon, 1953-
Weiland, C.
Church, J. R.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract
Hard X-ray photoelectron spectroscopy (HAXPES) analyses were carried out on metal-oxidesemiconductor
(MOS) samples consisting of Si, thick and thin Al2O3, and a Ti metal cap. Using Si
1s and C 1s core levels for an energy reference, the Al 1s and Si 1s spectra were analyzed to reveal
information about the location and roles of charges throughout the MOS layers. With different
oxide thicknesses (2 nm and 23 nm), the depth sensitivity of HAXPES is exploited to probe different
regions in the MOS structure. Post Ti deposition results indicated unexpected band alignment
values between the thin and thick films, which are explained by the behavior of mobile charge
within the Al2O3 layer. VC
Description
Final published version
Keywords
Citation
Church, J. R., Weiland, C., & Opila, R. L. (2015). Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy. Applied Physics Letters, 106(17), 171601. doi:http://dx.doi.org/10.1063/1.4919448