Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy
Date
2011
Authors
Klenov, D. O.
Zide, J. M. O.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved
x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P
sublattices show sharp termination on the interface. The In sublattice is continuous across the
interface. The study has shown the depletion of the Al concentration at the interface; at the last
atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero.
A monolayer of InAs at the interface is consistent with substitution of As for P at the surface
preceding growth.
Description
Final published version
Keywords
Citation
Klenov, D. O., & Zide, J. M. O. (2011). Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy. Applied Physics Letters, 99(14) doi:10.1063/1.3645632