Department: University of Delaware. Department of Electrical and Computer Engineering.; University of Delaware. Department of Materials Science and Engineering.
Publisher: American Institute of Physics
Date Issued: 2011
Abstract: Energies of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys with 0 < x ≤ 0.036 have been studied by contactless electroreflectance spectroscopy at room temperature. It has been clearly observed that the E0 transition shifts to longer wavelengths (∼50 meV/% of Bi), while the E0 + ΔSO transition is approximately unchanged with changes in Bi concentration. These changes in the energies of optical transitions are discussed in the context of the valence band anticrossing model as well as the common anion rule applied to III-V semiconductors.
Kudrawiec, R., Kopaczek, J., Misiewicz, J., Petropoulos, J. P., Zhong, Y., & Zide, J. M. O. (2011). Contactless electroreflectance study of E-0 and E-0 + delta(SO) transitions in In0.53Ga0.47BixAs1-x alloys. Applied Physics Letters, 99(25), 251906.
