Department: University of Delaware. Department of Materials Science and Engineering.; University of Delaware. Department of Electrical and Computer Engineering.
Publisher: American Institute of Physics
Date Issued: 2012
Abstract: We describe the growth conditions of InxGa1 xBiyAs1 y (lattice-mismatched and matched) on
InP substrates by molecular beam epitaxy and the resulting properties. Due to their anomalously
narrow bandgaps and the presence of bismuth, these materials are promising for optoelectronics
and thermoelectrics. Low growth temperature and moderate As/Bi beam equivalent pressure
ratios are beneficial for Bi incorporation, in good qualitative agreement with GaBiyAs1 y on
GaAs. Up to 6.75% bismuth is incorporated. High resolution x-ray diffraction and reciprocal
space mapping show that InxGa1 xBiyAs1 y samples exhibit good crystalline quality and zero
relaxation. The band gap is reduced in agreement with theoretical predictions. Lattice-matched
samples have been produced with lattice mismatch 0.21%.
Zhong, Y., Dongmo, P. B., Petropoulos, J. P., & Zide, J. M. O. (2012). Effects of molecular beam epitaxy growth conditions on composition and optical properties of in xGa 1-xBi yAs 1-y. Applied Physics Letters, 100(11) doi:10.1063/1.3695066
